This project provides a thoroughly investigation on GaN-based power switching devices through physics-based simulation. Three major challenges have been addressed: suppressing current collapse, enhancing off-state breakdown voltage, achieving enhancement-mode operation.
In addition, this project also presents novel paths in designing GaN-based and GaAs-based terahertz and infrared quantum well photodetectors using intersubband (ISB) transition. The energy levels, wavefunction and effects of doping have been studied by solving Schrödinger-Poisson equations self-consistently.
This code has a document (117 pages) which describe the algorithm in detail.
Part I: Find phonon frequency ?
This code is for interface phonon mode calculation of AlGaAs/GaAs triple quantum well photodetector without bias
Part II: Find constant A
This code is for constant A calculation for a given phonon w
Part III: Calculate interface phonon potential
This code is for interface phonon potential calculation
W is the interface phonon modes calculated from Part I
a is the constant A for each phonon mode calculated from Part II
Part IV: Absorption coefficient calculation
This code is for absorption coefficient calculation of triple quantum well photodetector